40V
BVDSS
32mΩ
RDSON
5A
ID
40V
VDS
何小姐
主营: 电子元器件代理加盟
广东省深圳市
深圳黄金树科技有限公司代理国内MOSFET,IC 集成电路,桥堆 二三极管 可控硅等电子产品,
产品主要应用于UPS、EPS、逆变电源、工业控制板、变频电源、开关电源、电力操作电源、小家电,新能源,汽车电子等高科技行业,并致力于推广供应环保无铅的绿色产品。
我们本着“诚信经营,互惠互赢”的理念贯穿供应,销售,服务的始终。我们始终将“创新,进取,诚信合作,品质为重,客户为重,服务至上”作为商务合作发展的基石,愿我们持续,共同发展!深圳黄金树科技有限公司是国内外知名的电子元器件混合分销商,成立于深圳龙华区,主要产品有SPM、IGBT、MOSFET、FRD(快恢复)、可控硅、光耦、IC、MCU等。代理品牌有:无锡新洁能(NCE),江苏捷捷微(JJM),福斯特(FIRST),台湾博盛(POTENS),优势现货品牌有UTC友顺,安森美(ON),英飞凌(Infineon)
,NXP,ADI,RICHTEK,TI等。联系电话:13510537787何小姐 微信同步
我司常期备有FKN4002 SOT23库存,保证原装品质,假一赔万。欢迎前来洽谈合作。
FKN4002
N-Ch 40V Fast Switching MOSFETs
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology
BVDSS RDSON ID
40V 32mΩ 5A
The FKN4002 is the high cell density trenched
N-ch MOSFETs, which provides excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
The FKN4002 meet the RoHS and Green Product
requirement with full function reliability approved.
Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 5 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 4.1 A IDM Pulsed Drain Current2 16 A PD@TA=25℃ Total Power Dissipation3 1.25 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-ambient 1 --- 100 ℃/W RθJC Thermal Resistance Junction-Case1 --- 60 ℃/W
. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A FKN4002 N-Ch 40V Fast Switching MOSFETs 2 Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.032 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=4A --- --- 32 m VGS=4.5V , ID=3A --- --- 45 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.5 --- mV/℃ IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=4A --- 12 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.6 --- Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=3A --- 5.5 --- Qgs Gate-Source Charge --- 1.25 --- nC Qgd Gate-Drain Charge --- 2.5 --- Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3 ID=1A --- 8.9 --- ns Tr Rise Time --- 2.2 --- Td(off) Turn-Off Delay Time --- 41 --- Tf Fall Time --- 2.7 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 593 --- Coss Output Capacitance --- 76 --- pF Crss Reverse Transfer Capacitance --- 56 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- 5 A ISM Pulsed Source Current2,4 --- --- 16 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation
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